| 摘要 |
A nonvolatile semiconductor memory device according to an embodiment includes memory strings which have a plurality of transistors including gate electrode films formed over sides of columnar semiconductor films on gate dielectric films in a height direction of the semiconductor films, and which are arranged in a matrix shape substantially perpendicularly above a substrate. The gate electrode films of the transistors at same height of the memory strings arranged in a first direction are connected to one another. A distance between the semiconductor films at least in a forming position of the transistor at an uppermost layer of the memory strings adjacent to each other in the first direction is smaller than double of thickness of the gate dielectric films.
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