发明名称 |
III-V semiconductor devices with buried contacts |
摘要 |
A semiconductor device such as a diode or transistor includes a semiconductor substrate, a first region of III-V semiconductor material on the semiconductor substrate and a second region of III-V semiconductor material on the first region. The second region is spaced apart from the semiconductor substrate by the first region. The second region is of a different composition than the first region. The semiconductor device further includes a buried contact extending from the semiconductor substrate to the second region through the first region. The buried contact electrically connects the second region to the semiconductor substrate.
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申请公布号 |
US8569799(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201113331899 |
申请日期 |
2011.12.20 |
申请人 |
CURATOLA GILBERTO;POZZOVIVO GUANMAURO;HAEBERLEN OLIVER;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
CURATOLA GILBERTO;POZZOVIVO GUANMAURO;HAEBERLEN OLIVER |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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