| 摘要 |
<p>A low-loss GaN-based semiconductor device can be easily realized by making use of the polarization junction, fundamentally easing the peak electric field generating in a region of a conductive channel, and along with making high voltage resistance, and suppressing the generation of current collapse at the practical level. The semiconductor device has the In z Ga 1-z N layer 11 (where 0 ‰¤ z < 1), the Al x Ga 1-x N layer 12 (where 0 < x < 1), the In y Ga 1-y N layer 13 (where 0 ‰¤ y < 1) and the p-type In w Ga 1-w N layer 14 (where 0 ‰¤ w < 1) which are sequentially stacked on a base substrate of a C-plane sapphire substrate, etc. At a non-operating time, the two-dimensional hole gas 15 is formed in the In y Ga 1-y N layer 13 in the vicinity part of a hetero-interface between the Al x Ga 1-x N layer 12 and the In y Ga 1-y N layer 13, and the two-dimensional electron gas 16 is formed in the In z Ga 1-z N layer 16 in the vicinity part of a hetero-interface between the In z Ga 1-z N layer 11 and the Al x Ga 1-x N layer 12.</p> |
