发明名称 |
Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics |
摘要 |
A method includes forming a transistor at a surface of a semiconductor substrate, wherein the step of forming the transistor comprises forming a gate electrode, and forming a source/drain region adjacent the gate electrode. First metal features are formed to include at least portions at a same level as the gate electrode. Second metal features are formed simultaneously, and are over and contacting the first metal features. A first one of the second metal features is removed and replaced with a third metal feature, wherein a second one of the second metal features is not removed. A fourth metal feature is formed directly over and contacting the gate electrode, wherein the third and the fourth metal features are formed using a same metal-filling process.
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申请公布号 |
US8569129(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201113149547 |
申请日期 |
2011.05.31 |
申请人 |
MA WEI YU;CHU FANG-TSUN;YEN KVEI-FENG;WANG YAO-BIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
MA WEI YU;CHU FANG-TSUN;YEN KVEI-FENG;WANG YAO-BIN |
分类号 |
H01L21/8234;H01L21/20;H01L21/3205;H01L21/336;H01L21/8238 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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