发明名称 |
Active area bonding compatible high current structures |
摘要 |
A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer.
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申请公布号 |
US8569896(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201213532843 |
申请日期 |
2012.06.26 |
申请人 |
GASNER JOHN T.;CHURCH MICHAEL D.;PARAB SAMEER D.;BAKEMAN, JR. PAUL E.;DECROSTA DAVID A.;LOMENICK ROBERT;MCCARTY CHRIS A.;INTERSIL AMERICAS INC. |
发明人 |
GASNER JOHN T.;CHURCH MICHAEL D.;PARAB SAMEER D.;BAKEMAN, JR. PAUL E.;DECROSTA DAVID A.;LOMENICK ROBERT;MCCARTY CHRIS A. |
分类号 |
H01L23/48;H01L21/44 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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