发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device of an embodiment includes: a silicon carbide substrate including first and second principal surfaces; a first conductive-type first silicon carbide layer provided on the first principal surface of the silicon carbide substrate; a second conductive-type first silicon carbide region formed on a surface of the first silicon carbide layer; a first conductive-type second silicon carbide region formed on a surface of the first silicon carbide region; a second conductive-type third silicon carbide region formed on the surface of the first silicon carbide region; a gate insulating film continuously formed on the surfaces of the first silicon carbide layer, the first silicon carbide region, and the second silicon carbide region; a first electrode formed of silicon carbide formed on the gate insulating film; a second electrode formed on the first electrode; an interlayer insulating film for covering the first and second electrodes; a third electrode electrically connected to the second silicon carbide region and the third silicon carbide region; and a fourth electrode formed on the second principal surface of the silicon carbide substrate.
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申请公布号 |
US8569795(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201113217472 |
申请日期 |
2011.08.25 |
申请人 |
KONO HIROSHI;NAKABAYASHI YUKIO;SHINOHE TAKASHI;MIZUKAMI MAKOTO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KONO HIROSHI;NAKABAYASHI YUKIO;SHINOHE TAKASHI;MIZUKAMI MAKOTO |
分类号 |
H01L33/32;H01L27/10;H01L27/11;H01L29/16;H01L29/80 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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