发明名称 |
Nonvolatile memory device and method for manufacturing same |
摘要 |
A nonvolatile memory device includes: at least one first interconnection extending in a first direction; at least one second interconnection disposed above the first interconnection and extending in a second direction nonparallel to the first direction; a memory cell disposed between the first interconnection and the second interconnection at an intersection of the first interconnection and the second interconnection and including a memory element; and an element isolation layer disposed between the memory cells. At least one dielectric film with a higher density than the element isolation layer is disposed on a sidewall surface of the memory cell.
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申请公布号 |
US8569731(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US20100726743 |
申请日期 |
2010.03.18 |
申请人 |
KONNO TAKUYA;FUKUMIZU HIROYUKI;NISHITANI KAZUHITO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KONNO TAKUYA;FUKUMIZU HIROYUKI;NISHITANI KAZUHITO |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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