发明名称 Package for high power devices
摘要 A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.
申请公布号 US8569883(B2) 申请公布日期 2013.10.29
申请号 US201113229487 申请日期 2011.09.09
申请人 INTERNATIONAL RECTIFIER CORPORATION;HAUENSTEIN HENNING M. 发明人 HAUENSTEIN HENNING M.
分类号 H01L23/12 主分类号 H01L23/12
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