CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME, METHOD OF FORMING A CAPACITOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A capacitor with high capacitance, a semiconductor device including the same, a method for forming the capacitor, and a method for manufacturing the semiconductor device using the same are provided to increase the area of a bottom electrode by removing a seed forming process when the bottom electrode with a hemispherical pattern is formed. CONSTITUTION: A bottom electrode (180) has a curved surface. An interlayer dielectric layer (110) is arranged between a substrate (100) and the bottom electrode. A first seed (174) is formed on the sidewall of the bottom electrode and has a shape which corresponds to the curved surface of the bottom electrode. A dielectric layer (190) is arranged on the bottom electrode and covers the first seed. A top electrode (200) is arranged on the dielectric layer.