| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposit removing method capable of efficiently removing deposit regardless of the longness and shortness of a standing time after etching treatment, suppressing damage to silicon dioxide of a structure in a pattern, and evenly performing treatment.SOLUTION: The deposit removing method has a step for heating a substrate to expose the substrate to oxygen plasma, and a cycle processing step for repeating a first period for exposing the substrate to the atmosphere of mixed gas of hydrogen fluoride gas and alcohol gas to make the total pressure of the mixed gas or partial pressure of the alcohol gas to be first total pressure or partial pressure of the alcohol gas, and a second period for making the total pressure of the mixed gas or the partial pressure of the alcohol gas to be second total pressure or partial pressure of the alcohol gas lower than the first total pressure of the partial pressure of the alcohol gas, supplies the mixed gas to the substrate from an area facing the substrate, and increases a supply amount of the mixed gas per unit area in a first area including a central part of the substrate more than in a second area outside the first area in the cycle processing step. |
