| 摘要 |
PROBLEM TO BE SOLVED: To inhibit ringing at the time of switching in a semiconductor device which achieves a normally-off operation by using a normally-on power element.SOLUTION: A semiconductor device comprises a GaN transistor 3 and a MOS transistor 4 which are stacked with an interposer 8 interposed therebetween. The normally-on GaN transistor 3 and the normally-off MOS transistor 4 are cascode connected. A source electrode pad 32 of the GaN transistor 3 and a drain electrode pad 41 of the MOS transistor 4, and a gate electrode pad 33 of the GaN transistor 3 and a source electrode pad 42 of the MOS transistor 4 are connected via through holes 82, 83, respectively, which are formed in the interposer 8. |
