| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device manufacturing method which can inhibit detachment of a back electrode; and provide a silicon carbide semiconductor device having a back electrode structure in which detachment of a back electrode is prevented.SOLUTION: A semiconductor device manufacturing method comprises: forming a layer including titanium and nickel on a rear face of a silicon carbide substrate 1; producing a titanium-carbide-containing nickel silicide layer 4 by performing a heat treatment; and removing a carbon layer by desorption, which is deposited by a subsequent heat treatment on the titanium-carbide-containing nickel silicide layer 4 by performing of a heating treatment or reaction with an oxygen radical or ozone in an oxygen-containing atmosphere. Accordingly, detachment of a back electrode 8 formed on the titanium-carbide-containing nickel silicide layer can be inhibited in the subsequent process. By making the number of carbon atoms included in the titanium carbide in an outermost surface of the titanium-carbide-containing nickel silicide layer 4 to the number of carbon atoms included in the outermost surface be 12% and over, effectiveness of detachment prevention of the back electrode 8 can be improved. |
