发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To form a surface electrode ensuring excellent coverage for irregularities of a Schottky contact, and having an optimum reflectance for image recognition such as positioning.SOLUTION: On the front surface of an SiC substrate 11, a layer containing any one metal out of titanium, tungsten, molybdenum, and chromium is formed, and then the layer is heated thus forming a Schottky electrode 16 on the SiC substrate 11. A surface electrode 17 is formed of aluminum or aluminum containing silicon on the surface of the Schottky electrode 16. When forming the surface electrode 17, excellent coverage for irregularities of the Schottky electrode 16 is ensured by heating at 100°C-500°C, and the surface electrode 17 has a reflectance suitable for image recognition of an automatic wire bonding device.
申请公布号 JP2013222907(A) 申请公布日期 2013.10.28
申请号 JP20120095159 申请日期 2012.04.18
申请人 FUJI ELECTRIC CO LTD 发明人 IMAI BUNICHI
分类号 H01L21/329;H01L29/47;H01L29/872 主分类号 H01L21/329
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