发明名称 IN-LINE NANO PATTERNING APPARATUS AND ANTI-REFLECTIVE SUBSTRATE NANO-PATTERNED BY THE APPARATUS
摘要 PURPOSE: An in-line nano patterning apparatus and an anti-reflective substrate manufactured by the same are provided to realize a nano mask in a sputtering mode and to sequentially implement an etching process in an in-line mode. CONSTITUTION: An in-line nano patterning apparatus includes a load lock chamber (10), a sputter chamber (20), an etch chamber (30), and an unload lock chamber (40). In the process, a substrate is put into the load lock chamber as a workpiece. The substrate ejected from the load lock chamber is put into the sputter chamber in order to form a nano mask on the surface of the substrate in a sputtering mode. The substrate with the nano mask on the surface is put into the etch chamber in order to etching the surface of the substrate, thereby forming a nano pattern. The unload lock chamber ejects the substrate with the nano pattern to the outside. The substrate which is put into the load lock chamber is ejected from the unload lock chamber. [Reference numerals] (AA) Progress direction of process
申请公布号 KR101321533(B1) 申请公布日期 2013.10.28
申请号 KR20130098248 申请日期 2013.08.20
申请人 SEP, INC. 发明人 LEE, SANG RO;RHA, JONG JOO;PARK, MYUNG JUM;KIM, MYOUNG GEUN;KIM, YUN HWAN;SEO, JAE HYUNG;YUE XIN;LEE, JI YOUNG
分类号 C23C14/34;C23C14/04 主分类号 C23C14/34
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