| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique of achieving a semiconductor device which has guaranteed intended resistivity.SOLUTION: A semiconductor device manufacturing method comprises a high resistance layer formation process (S14) of applying ions on a predetermined region of a semiconductor substrate after processes capable of causing change in resistivity to form a high resistance layer having higher resistivity than a surrounding area in the predetermined region. Accordingly, the high resistance layer can be formed in the predetermined region with good accuracy even when resistivity has changed in a treatment before the high resistance layer formation process, for example. |
