发明名称 SPUTTERING FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sputtering film deposition method capable of forming a metal film having the same quality as that of a plated film of wet plating on a resin molding just by a dry process.SOLUTION: In a sputtering film deposition method of forming a metal film on a resin molding W immediately after being molded by sputtering of applying a DC high voltage to the resin molding W and a target 27 in an inert gas, a film forming pressure during sputtering is set to be 1 Pa or higher, a film forming temperature during sputtering is set to 20 to 60°C, an interval of the resin molding W and the target 27 during sputtering is set to 100 to 200 mm, and power of a sputtering power source 28 is set to be DC 20 KW or greater.
申请公布号 JP2013221186(A) 申请公布日期 2013.10.28
申请号 JP20120094156 申请日期 2012.04.17
申请人 NIKUNI:KK 发明人 OSAKI SOICHIRO;SASAGAWA KOICHI;UMEKI TOSHIAKI
分类号 C23C14/34;C23C14/14 主分类号 C23C14/34
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