COMPLEMENTARY SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a complementary semiconductor device and a method for manufacturing the same, capable of further reducing power consumption by achieving a dual channel CMOS structure which employs different channel materials for nMOSFET and pMOSFET.SOLUTION: A complementary semiconductor device comprises: a first semiconductor layer 12 formed on a part of a first insulator layer 11; a MOSFET of a first conductivity type formed on the first semiconductor layer 12; a first back gate electrode 13 formed in a position corresponding to the MOSFET of the first conductivity type under the first insulator layer 11; a second back gate electrode 16 formed on another part of the first insulator layer 11; a second insulator layer 17 formed on the second back gate electrode 16 and a second semiconductor layer 18 which is formed on the second insulator layer 17 and whose material differs from a material of the first semiconductor layer 12; and a MOSFET of a second conductivity type formed on the second semiconductor layer 18.