发明名称 INFRARED SENSOR
摘要 PROBLEM TO BE SOLVED: To provide an infrared sensor capable of improving sensitivity and reducing noise.SOLUTION: An infrared sensor 100 includes a thermal infrared detecting portion 3 formed on one surface side of a semiconductor substrate 1; and a cavity portion 11 formed immediately under a part of the thermal infrared detecting portion 3 in the semiconductor substrate 1. The thermal infrared detecting portion 3 includes a supporting portion 3d formed on the one surface side of the semiconductor substrate 1 and at a peripheral portion of the cavity 11; a thin film structure portion 3a coupled to the supporting portion 3d and covering the cavity portion 11 on the one surface side of the semiconductor substrate 1; a thermopile 30a having a plurality of cold contacts T2 and a plurality of hot contacts T1; and a heat equalizing layer 3h made of a material having a higher infrared absorption rate than that of the thermopile 30a, and provided on the thin film structure portion 3a. The infrared sensor 100 is provided with the heat equalizing layer 3h at a center portion in a plane view of the thin film structure portion 3a, and each of the hot contacts T1 on a side close to a coupling part with the supporting portion 3d in the thin film structure portion 3a rather than the heat equalizing layer 3h provided at the center portion.
申请公布号 JP2013221768(A) 申请公布日期 2013.10.28
申请号 JP20120091594 申请日期 2012.04.13
申请人 PANASONIC CORP 发明人 KAJIMOTO TSUYOSHI;TSUJI KOJI
分类号 G01J1/02;H01L27/144;H01L35/32 主分类号 G01J1/02
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