METHOD FOR PREPARING HIGH EFFICIENCY LIGHT EMITTING DIODE THEREOF

摘要

PURPOSE: A method for manufacturing a light emitting diode is provided to improve luminous efficiency by inserting particles between 3D structures. CONSTITUTION: A GaN-based semiconductor layer is formed on a substrate (310). A first semiconductor layer (330), an active layer (340), and a second semiconductor layer (350) are successively laminated on the GaN-based semiconductor layer. A plurality of GaN-based 3D structures (320) are formed on the second semiconductor layer. Particles are formed between the GaN-based 3D structures. The surface of the second semiconductor layer is exposed on the upper surface of the GaN-based 3D structure. The second semiconductor layer is regrown by using the exposed surface of the second semiconductor layer as a seed.