| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit an operation of a parasitic bipolar transistor and generate a potential difference between a source region and a back gate region.SOLUTION: A high-voltage transistor NTR formed on a semiconductor substrate SUB comprises a first conductivity type well region LPW, first impurity regions SR each serving as a source region and second impurity regions DR each serving as a drain region. The semiconductor device further comprises a third impurity region PR3 and separation gate electrodes SG. The third impurity region PR3 is formed between a pair of first impurity regions SR in planar view, and is a region for extracting potential of the well region LPW. Each separation gate electrode SG is formed on a principal surface between the first impurity region SR and the third impurity region PR3. |
