| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can emit with high extraction efficiency, a terahertz wave having a spread angle which is restricted in a two-dimensional direction.SOLUTION: A semiconductor laser device 1 comprises: a common electrode 3; a semiconductor laminate 4 provided on the common electrode 3; counter electrodes 6 provided on the semiconductor laminate 4 so as to be opposite to the common electrode 3; an annular body 5 provided on the common electrode 3 so as to be adjacent to the semiconductor laminate 4; a plurality of split electrodes 8 provided on the annular body 5 so as to face the common electrode 3 and arranged circularly; and connection electrodes 10 for electrically connecting the split electrodes 8 and the common electrode 3. The semiconductor laminate 4 has a quantum cascade laser structure and generates a terahertz wave by application of voltage between the common electrode 3 and the counter electrodes 6. The annular body 5 functions as a meta-material ring resonator together with the common electrode 3, the split electrodes 8 and the connection electrodes 10 to emit the terahertz wave incident from the semiconductor laminate 4 to the outside. |
