METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To form a thin film, such as a silicon film, including a predetermined element, in a low-temperature region.SOLUTION: A thin film including a predetermined element is formed on a substrate by performing a predetermined number of times of cycles comprising: a step (step 1) of supplying a first raw material including the predetermined element and a halogen group to the substrate in a processing chamber; a step (step 2) of supplying a second raw material including the predetermined element and an amino group to the substrate in a processing chamber; and a step (step 3) of supplying halogen, nitrogen and a reducing agent containing no carbon to the substrate in a processing chamber.