| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can emit with high extraction efficiency, a terahertz wave having a spread angle which is restricted in a two-dimensional direction.SOLUTION: A semiconductor laser device 1 comprises: a common electrode 3; an annular semiconductor laminate 4 provided on the common electrode 3; a plurality of split electrodes 5 provided on the semiconductor laminate 4 so as to be opposite to the common electrode 3 and circularly arranged; counter electrodes 7 which face the common electrode 3 and electrically connected to the split electrodes 5, respectively; and an insulation layer 6a provided between the common electrode 3 and the counter electrodes 7. The semiconductor laminate 4 has a quantum cascade laser structure and generates a terahertz wave by application of voltage between the common electrode 3 and the split electrodes 5. The semiconductor laminate 4 functions as a meta-material ring resonator together with the common electrode 3, the split electrodes 5, the counter electrodes 7 and the insulation layer 6a to emit the terahertz wave to the outside. |
