| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the size and simplify the process, thereby securing the reproducibility of the process and improving the reliability according to the reduction of an error rate. CONSTITUTION: Each memory block (MB1,MB2) includes a plurality of conductive lines (WL0-WL31). Each conductive line includes a first line (L1) extending in a first direction and a second line (L2) extending in the second direction. The second lines include a first pattern (LP1) extending in the second direction from the end of the first line and a second pattern (LP2) formed on one wall or the other wall of the first pattern. The width of the first and second pattern is the same as that of the first line. Dummy patterns (DL) are arranged between the second lines to extend in the second direction. |
