RESISTANCE CHANGE MEMORY DEVICE HAVING THRESHOLD SWITCHING AND MEMORY SWITCHING CHARACTERS, FABRICATION METHOD FOR THE SAME, AND RESISTANCE CHANGE MEMORY DEVICE ARRAY HAVING THE SAME

摘要

PURPOSE: A resistance variation memory device, a manufacturing method, and a resistance variation memory device array are provided to read programmed data by including a hybrid switching film including a switching characteristic and a memory switching characteristic. CONSTITUTION: A plurality of first electrodes (110) is arranged to a first direction on a circuit board (100). An insulation film (120) is formed on the first electrode. A hybrid switching film (135) is arranged between the first electrode and a second electrode (140). The hybrid switching film includes a memory switching film (135b) including a memory switching and a threshold switching film (135a) including a threshold switching characteristic. The threshold switching film includes a metal-insulator transfer characteristic.