| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device and a manufacturing method of the same, which can reduce contact resistance between a nitride semiconductor layer and an ohmic electrode.SOLUTION: In a GaN HFET, a 2DEG layer 3 is formed near heterointerface between an undoped GaN layer 1 and an undoped AlGaN layer 2, and ohmic electrodes (source electrode 11, drain electrode 12) composed of a TiAl material are formed in recesses 106, 109 which pierce the 2DEG layer 3 by sequentially sputtering a Ti film 107, Al and TiN and performing annealing at 400°C-550°C. A full width at half maximum (FWHM) of a (002) plane rocking curve obtained by X-ray diffraction of the Ti film 107 which is formed when the source electrode 11 and the drain electrode 12 are manufactured is set at 7° and over. |
