| 摘要 |
PURPOSE: An organic semiconductor element and a manufacturing method thereof reduce the contact resistance of an electrode and an organic semiconductor, enhancing the element characteristics. CONSTITUTION: A gate electrode (124) is formed on a substrate (110). A source electrode (173) and a drain electrode (175) are formed on a gate insulating layer (140). The source electrode and the drain electrode comprise copper and copper oxide. Protective films (163, 165) are formed on the source electrode and the drain electrode respectively. The protective film comprises multiple self-assembly molecules. The multiple self-assembly molecules are arranged to have 60° or less interval angle against the vertical direction of the electrode surface. |
