| 摘要 |
PURPOSE: A method of manufacturing a oxide TFT(Thin Film Transistor) is provided to prevent characteristic deterioration of a oxide semiconductor by using silicon nitride film as a protective layer of the oxide semiconductor. CONSTITUTION: A gate electrode(121) is formed on substrate. A gate insulating layer(151a) is formed on the gate electrode. An active layer consisting of the amorphous zinc oxide type semiconductor(124) is formed on the gate insulating layer. Source/drain electrodes(122,123) is connected with fixed region of the active layer. The second protective layer is formed on the first protective layer. |
