RESISTIVE-SWITCHING RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A resistive switching memory device and a manufacturing method thereof are provided to remove a forming process by inducing a resistive switching operation using the defect of an ultra thin transition metal oxide layer. CONSTITUTION: A bottom electrode is formed on a semiconductor substrate (S10). A metal oxide layer used as a resistive layer is formed on the bottom electrode (S20). A top electrode is formed on the metal oxide layer (S30). The metal oxide layer is deposited as an ultra thin film. A resistive switching operation is induced by using the defect of the ultra thin film (S40). [Reference numerals] (S10) Bottom electrode is formed on a semiconductor substrate; (S20) Metal oxide layer used as a resistive layer is formed; (S30) Top electrode is formed; (S40) Resistive switching operation is induced