PROCEDE DE MESURE DE LA RESISTANCE D'UNE LIAISON METALLIQUE ENTRE DEUX PARTIES DE CIRCUITS INTEGRES ASSEMBLEES FORMANT UNE STRUCTURE INTEGREE TRIDIMENSIONNELLE ET DISPOSITIF CORRESPONDANT

摘要

The method involves forming two cavities (CV1) on a non-assembled face of a part of an integrated circuit, where two cavities lead to two portions of two metal lines (LM1), respectively, or belonging to the metal lines. Resistance of a metal connection is measured by a measuring equipment that is in electrical contact with the portions through the cavities. A conducting layer (CC) is formed at bottom and on walls of the cavities forming an electrical contact with the portions, where the conducting layer is made by aluminum. Independent claims are also included for the following: (1) a method for realization a three-dimensional (3D) integrated structure (2) a 3D integrated structure.