METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURES N-PBTE:BI WITH IMPROVED THERMOELECTRIC POWER

摘要

A method for producing semiconductor structures n-PbTe:Bi with improved thermoelectric power includes the method of open vacuum evaporation, wherein the starting materials are vaporized from the compound synthesized in advance under the temperature T=(970±10) K on the glass-ceramic substrate under the temperature T. As a starting material lead telluride doped with bismuth n-PbTe:Bi with dopant content of 0.05 atm. % is used.