| 摘要 |
<p>PURPOSE: A memory cell refreshing method and a semiconductor memory device using the same are provided to increase performance by controlling the refresh of a weak cell having short data retention time. CONSTITUTION: A default refresh controller (110) receives a refresh command from a host, generates a default refresh signal, and controls multiple memory cells to be refreshed. A weak cell refresh controller (130) receives the default refresh signal, generates a weak cell refresh signal, and controls a weak cell among the multiple memory cells to be refreshed. The weak cell is refreshed at least one more time during a refresh period where all the multiple memory cells are refreshed by the default refresh controller.</p> |
