| 摘要 |
A semiconductor structure includes a GaAs or InP substrate, an In<SUB>x</SUB>Ga<SUB>1-x</SUB>As epitaxial layer grown on the substrate, where x is greater than about 0.01 and less than about 0.53, and a wider bandgap epitaxial layer grown as a cap layer on top of the In<SUB>x</SUB>Ga<SUB>1-x</SUB>As epitaxial layer. |
