发明名称 VAPOR DEPOSITION APPARATUS AND METHOD ASSOCIATED
摘要 <p>A vapor deposition apparatus (1) includes a deposition chamber (4) for carrying out a deposition of a film on a substrate, source gas tubes (21) and (31) for supplying a source gas, a transfer unit (5) for transferring the substrate in the interior of the deposition chamber (4) so that the substrate is alternately situated in a state where the substrate is located in a deposition region that faces the gas discharge port for supplying the source gas and in a state where the substrate is located in other region except the deposition region, while the source gas is supplied from a gas discharge port of any one of the source gas tubes (21) and (31), and a supply tube (7) for supplying a gas containing group-V element to the substrate S located in the other region.</p>
申请公布号 WO2013157057(A1) 申请公布日期 2013.10.24
申请号 WO2012JP04466 申请日期 2012.07.11
申请人 FURUKAWA CO., LTD.;MIZUTA, MASASHI 发明人 MIZUTA, MASASHI
分类号 C23C16/30;C23C16/455;C30B25/02;C30B29/40 主分类号 C23C16/30
代理机构 代理人
主权项
地址