发明名称 |
VAPOR DEPOSITION APPARATUS AND METHOD ASSOCIATED |
摘要 |
<p>A vapor deposition apparatus (1) includes a deposition chamber (4) for carrying out a deposition of a film on a substrate, source gas tubes (21) and (31) for supplying a source gas, a transfer unit (5) for transferring the substrate in the interior of the deposition chamber (4) so that the substrate is alternately situated in a state where the substrate is located in a deposition region that faces the gas discharge port for supplying the source gas and in a state where the substrate is located in other region except the deposition region, while the source gas is supplied from a gas discharge port of any one of the source gas tubes (21) and (31), and a supply tube (7) for supplying a gas containing group-V element to the substrate S located in the other region.</p> |
申请公布号 |
WO2013157057(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
WO2012JP04466 |
申请日期 |
2012.07.11 |
申请人 |
FURUKAWA CO., LTD.;MIZUTA, MASASHI |
发明人 |
MIZUTA, MASASHI |
分类号 |
C23C16/30;C23C16/455;C30B25/02;C30B29/40 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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