GROUP III-NITRIDE SEMICONDUCTING MATERIAL AND A METHOD OF MANUFACTURING THE SAME

摘要

Group III-nitride semiconducting materials comprising a graphene based layer having thereon at least one nitride nucleation /buffer layer adapted for conformal coverage of entire graphene surface and at least one group III-nitride semiconducting film selected from alloy family of (Al,Ga,In,B) N on said nitride nucleation/buffer layer, in orientations selected from polar, non-polar and semi-polar with or without a suitable underlying substrate, and planar free-standing said Group III-nitride semiconducting material that is advantageously transferable to a wide variety of substrates selected from glass or flexible plastic substrates and adapted for the fabrication of various optoelectronic devices including LEDs, lasers, transistors.