发明名称 METHOD FOR EVALUATING DEGREE OF CRYSTAL ORIENTATION IN POLYCRYSTALLINE SILICON, METHOD FOR SELECTING POLYCRYSTALLINE SILICON ROD, AND METHOD FOR MANUFACTURING SINGLE CRYSTALLINE SILICON
摘要 PROBLEM TO BE SOLVED: To provide a method for selecting a polycrystalline silicon suitable for raw material for manufacturing a single crystalline silicon with high quantitativity and reproducibility, contributing to stable manufacturing of a single crystalline silicon.SOLUTION: When a disc-shaped sample 20 taken from a polycrystalline silicon rod is evaluated, peaks emerge in a &phgr; scan chart in some cases. The fewer the number of the peaks and the narrower the half width thereof, the more suitable the rod is for use as a raw material for manufacturing a single crystalline silicon. The number of peaks emerging in a &phgr; scan chart is preferably 24/cmor less, in terms of the number of peaks per unit area of the disc-shaped sample, for both of the Miller index planes <111> and <220>. With Rrepresenting the radius of the disc-shaped sample, a value obtained by multiplying the peak half width by &delta;L=2&pgr;R/360 is defined as the heterogeneous crystal particle diameter. It is preferred to select a rod having a heterogeneous crystal particle diameter less than 0.5 mm for both of the planes for use as a raw material for manufacturing a single crystalline silicon.
申请公布号 JP2013217653(A) 申请公布日期 2013.10.24
申请号 JP20120085528 申请日期 2012.04.04
申请人 SHIN ETSU CHEM CO LTD 发明人 MIYAO SHUICHI;OKADA JUNICHI;NEZU SHIGEYOSHI
分类号 G01N23/20;C01B33/02;C30B29/06 主分类号 G01N23/20
代理机构 代理人
主权项
地址