| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method capable of embedding a Mn containing thin film, a CuMn containing alloy thin film, or the like even in a fine recessed section with high step coverage by forming these films by heat treatment such as CVD, and greatly reducing a device cost by performing continuous processing with the same processor.SOLUTION: On a surface of a workpiece W to be processed, a thin film is formed by heat treatment by using transition metal containing material gas containing transition metal and oxygen containing gas in a treatment container 14 which is made capable of vacuum pull. Thereby, for example, when forming a Mn containing thin film, a CuMn containing alloy thin film, or the like by heat treatment such as CVD, these films can be embedded even in a fine recessed section with high step coverage. |
