发明名称 |
SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR FABRICATING SAME |
摘要 |
Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.
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申请公布号 |
US2013277732(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201313919655 |
申请日期 |
2013.06.17 |
申请人 |
SPANSION LLC |
发明人 |
FANG SHENQING;XUE GANG;LI WENMEI;KANG INKUK |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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