发明名称 METHODS OF DEPOSITING A SEMICONDUCTOR MATERIAL ON A SUBSTRATE
摘要 Methods of depositing material on a substrate include forming a precursor gas and a byproduct from a source gas within a thermalizing gas injector. The byproduct may be reacted with a liquid reagent to form additional precursor gas, which may be injected from the thermalizing gas injector into a reaction chamber. Thermalizing gas injectors for injecting gas into a reaction chamber of a deposition system may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. A pathway may extend from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet. The thermalizing conduit may have a length that is greater than a shortest distance between the inlet and the liquid container. Deposition systems may include one or more such thermalizing gas injectors.
申请公布号 US2013280892(A1) 申请公布日期 2013.10.24
申请号 US201313919539 申请日期 2013.06.17
申请人 SOITEC 发明人 BERTRAM, JR. RONALD THOMAS
分类号 H01L21/02 主分类号 H01L21/02
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