发明名称 |
METHODS FOR DEPOSITING BEVEL PROTECTIVE FILM |
摘要 |
A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge. |
申请公布号 |
WO2012054577(A3) |
申请公布日期 |
2013.10.24 |
申请号 |
WO2011US56849 |
申请日期 |
2011.10.19 |
申请人 |
LAM RESEARCH CORPORATION;SHIN, NEUNGHO;CHUNG, PATRICK;KIM, YUNSANG |
发明人 |
SHIN, NEUNGHO;CHUNG, PATRICK;KIM, YUNSANG |
分类号 |
C23C16/50 |
主分类号 |
C23C16/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|