METHOD FOR DRIVING NONVOLATILE STORAGE ELEMENT, AND NONVOLATILE STORAGE DEVICE

摘要

A method for driving a nonvolatile storage element having a resistance changing element for changing in a reversible manner a resistance state between a low-resistance state and a high-resistance state on the basis of an applied electrical signal, and a transistor connected in series to the resistance changing element, the method for driving the nonvolatile storage element including: steps (S200, S202) for changing the resistance changing element to a low-resistance state by applying a first gate voltage to the gate of the transistor and applying a negative first write voltage based on a first electrode; and a step (S205) for changing the transistor resistance value in a low-resistance write when either the current value of a low-resistance write current flowing to the resistance changing element during the execution of the step for setting the resistance changing element to a low-resistance state, or the resistance value of the nonvolatile storage element when the resistance changing element is in the low-resistance state deviates from a prescribed range.