METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

This method for production of a semiconductor device is provided with a step of preparing a mask (212) on the principal surface (202) of a semiconductor substrate (200) or on the back surface (204) on the opposite side thereof. The semiconductor substrate (200) is provided on the principal surface (202) with an element region (206), and may also be provided with a non-element section between the principal surface (202) and the back surface (204). The method is further provided with a step of performing ion exposure of the mask (212) and the semiconductor substrate (200) from the mask side to form a high-resistance layer (222).