| 发明名称 |
Methods of Forming Semiconductor Devices |
| 摘要 |
In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed. |
| 申请公布号 |
US2013280888(A1) |
申请公布日期 |
2013.10.24 |
| 申请号 |
US201213452484 |
申请日期 |
2012.04.20 |
| 申请人 |
STRANZL GUDRUN;ZGAGA MARTIN;KAHN MARKUS;DENIFL GUENTER;INFINEON TECHNOLOGIES AG |
发明人 |
STRANZL GUDRUN;ZGAGA MARTIN;KAHN MARKUS;DENIFL GUENTER |
| 分类号 |
H01L21/78;H01L21/283 |
主分类号 |
H01L21/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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