| 摘要 |
PROBLEM TO BE SOLVED: To divide a thin wafer with excellent processing quality by reducing damage at an intersection between a first division schedule line and a second division schedule line.SOLUTION: A method for dividing a wafer includes the steps of: forming division grooves (304a and 304b) by irradiating a wafer (W) with a laser beam along first and second division schedule lines (301a and 301b) formed on a surface of the wafer (W); and dividing the wafer (W) along the first and second division schedule lines (301a and 301b) by grinding the wafer (W) to a prescribed thickness. The step of forming the division grooves (304a and 304b) reduces laser beam energy for one of the first and second division schedule lines (301a and 301b) more than laser beam energy for the other of the first and second division schedule lines (301a and 301b) at an intersection (306) between the first and second division schedule lines (301a and 301b). |
