SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress current constriction while enhancing a withstand voltage.SOLUTION: A silicon carbide semiconductor device 51H has a planar layout constructed by unit cells UC being periodically arranged. Each of the unit cells UC includes a valid cell AC and an invalid cell PC. Each of the valid cells AC has a switchable channel surface. The invalid cells PC are used for relaxing the electrical fields in the valid cells AC. At least one valid cell AC is disposed between the invalid cells PC adjacent to each other.