发明名称 |
Integrated Lateral High Voltage Mosfet |
摘要 |
An integrated circuit containing a dual drift layer extended drain MOS transistor with an upper drift layer contacting a lower drift layer along at least 75 percent of a common length of the two drift layers. An average doping density in the lower drift layer is between 2 and 10 times an average doping density in the upper drift layer. A process of forming an integrated circuit containing a dual drift layer extended drain MOS transistor with a lower drift extension under the body region and an isolation link which electrically isolates the body region, using an epitaxial process. A process of forming an integrated circuit containing a dual drift layer extended drain MOS transistor with a lower drift extension under the body region and an isolation link which electrically isolates the body region, on a monolithic substrate.
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申请公布号 |
US2013277739(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201313922381 |
申请日期 |
2013.06.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DENISON MARIE;PENDHARKAR SAMEER;HOWER PHILIP L. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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