发明名称 |
Dummy FinFET Structure and Method of Making Same |
摘要 |
A FinFET device may include a dummy FinFET structure laterally adjacent an active FinFET structure to reduce stress imbalance and the effects of stress imbalance on the active FinFET structure. The FinFET device comprises an active FinFET comprising a plurality of semiconductor fins, and a dummy FinFET comprising a plurality of semiconductor fins. The active FinFET and the dummy FinFET are laterally spaced from each other by a spacing that is related to the fin pitch of the active FinFET. |
申请公布号 |
US2013277760(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201213454960 |
申请日期 |
2012.04.24 |
申请人 |
LU CHANG-SHEN;PENG CHIH-TANG;HUANG TAI-CHUN;JENG PEI-REN;LIEN HAO-MING;LIN YI-HUNG;LEE TZE-LIANG;JANG SYUN-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LU CHANG-SHEN;PENG CHIH-TANG;HUANG TAI-CHUN;JENG PEI-REN;LIEN HAO-MING;LIN YI-HUNG;LEE TZE-LIANG;JANG SYUN-MING |
分类号 |
H01L27/088;H01L21/20 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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