发明名称 |
THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME |
摘要 |
Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a gate electrode; source and drain electrodes spaced apart in a up and down direction from the gate electrode and in a horizontal direction from each other; a gate dielectric formed between the gate electrode and the source electrode and between the gate electrode and the drain electrode; and an active layer formed between the gate dielectric and the source electrode and between the gate dielectric and the drain electrode, wherein the active layer is formed of at least two zinc oxide thin layers doped with an element.
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申请公布号 |
US2013280859(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201113977725 |
申请日期 |
2011.11.23 |
申请人 |
KIM JAE-HO;OH DONG-GUN;CHOI DO-HYUN;MOON JIN-WOOK |
发明人 |
KIM JAE-HO;OH DONG-GUN;CHOI DO-HYUN;MOON JIN-WOOK |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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