发明名称 |
NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING THE DEVICE, AND MEMORY SYSTEM |
摘要 |
A non-volatile memory device comprises a memory cell array comprising memory cells arranged in rows connected to corresponding word lines and columns connected to corresponding bit lines, a page buffer that stores a program data, a read-write circuit that programs and re-programs the program data into selected memory cells of the memory cell array and reads stored data from the programmed memory cells, and a control circuit that controls the page buffer and the read-write circuit to program the selected memory cells by loaded the program data from in page buffer and to re-program the selected memory cells by re-loaded the program data in the page buffer.
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申请公布号 |
US2013279260(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201313919127 |
申请日期 |
2013.06.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON CHI-WEON;CHAE DONG-HYUK;NAM SANG-WAN;YUN SUNG-WON |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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