THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A three dimensional semiconductor memory device and a method for fabricating the same are provided to improve the degree of integration by reducing the vertical height of a laminate structure. CONSTITUTION: A laminate structure (200) includes gate patterns (150) and oxide patterns (112). The gate patterns and the oxide patterns are alternately laminated on a substrate. A channel structure (210) passes through the laminate structure. The channel structure is connected to the substrate. A vertical insulator (121) is formed between the laminate structure and the channel structure.